Details

Autor(en) / Beteiligte

• Feezell, D. F.
• Speck, J. S.
• DenBaars, S. P.
• Nakamura, S.

Titel

Semipolar (}\bar}}\bar}}) InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

Ist Teil von

• Journal of display technology, 2013-04, Vol.9 (4), p.190-198

Ort / Verlag

IEEE

Erscheinungsjahr

2013

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• This work examines the effects of polarization-related electric fields on the energy band diagrams, wavelength shift, wave function overlap, and efficiency droop for InGaN quantum wells on various crystal orientations, including polar (0001) ( c -plane), semipolar (202̅1̅), semipolar (202̅1̅), and nonpolar (101̅0̅) ( m -plane). Based on simulations, we show that the semipolar (202̅1̅) orientation exhibits excellent potential for the development of high-efficiency, low-droop light-emitting diodes (LEDs). We then present recent advancements in crystal growth, optical performance, and thermal performance of semipolar (202̅1̅) LEDs. Finally, we demonstrate a low-droop, high-efficiency single-quantum-well blue semipolar (202̅1̅) LED with an external quantum efficiency of more than 50% at 100 A/cm 2 .