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Surface barrier 4H-SiC soft X-ray detecor for hot plasmas diagnostic
Ist Teil von
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems, 2012, p.247-250
Ort / Verlag
IEEE
Erscheinungsjahr
2012
Quelle
IEEE Electronic Library Online
Beschreibungen/Notizen
The work reports on the characterization of high purity epitaxial 4H-SiC grown by liquid phase epitaxy and the performances of Au-Ni/4H-SiC detectors fabricated on the same material. X-ray diffraction and topography as well as I-V, C-V and DLTS measurements are used for the evaluation of the material properties and device characteristics. The X-ray detection abilities are evaluated by pulse-height spectra measurements of the 241 Am. Preliminary results of the detector hardness to fast neutron and gamma ray radiations are also reported.