Details

Autor(en) / Beteiligte

• Stuber, M.
• Dennies, P.
• Lyons, G.
• Kobayashi, T.
• Domyo, H.

Titel

A manufacturable SOI CMOS process for low power digital, analog, and RF applications

Ist Teil von

• 1997 IEEE International SOI Conference Proceedings, 1997, p.70-71

Ort / Verlag

IEEE

Erscheinungsjahr

1997

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• Peregrine Semiconductor's UTSi(R) technology is a silicon-on-sapphire (SOS) CMOS process with proven manufacturability for high-performance, low-power commercial CMOS applications. Data are presented from the 0.7/spl mu/m single poly, triple metal process currently in production. The UTSi(R) CMOS process is compatible with standard CMOS processing equipment and techniques. Process parameters show excellent control and the process has demonstrated high reliability. Transistor and device parametric performance show this process to be capable of manufacturing low power products for digital, RF, and analog applications. The technology is fully qualified in plastic packages and is ready for high volume, low cost production. The process is shown to be scaleable to at least 0.5/spl mu/m for further performance gains.