Details

Autor(en) / Beteiligte

• Lammert, R.M.
• Jones, A.M.
• Youtsey, C.T.
• Hughes, J.S.
• Roh, S.D.
• Adesida, I.
• Coleman, J.J.

Titel

InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE

Ist Teil von

• IEEE photonics technology letters, 1997-11, Vol.9 (11), p.1445-1447

Ort / Verlag

IEEE

Erscheinungsjahr

1997

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• The design and operation of InGaAsP-InP ridge-waveguide (RW) distributed Bragg reflector (DBR) multiple quantum-well lasers with first-order surface gratings are presented. The RW DBR lasers are fabricated using only a single growth step without growth on a corrugated surface. Uncoated devices with grating etch depths of 0.6 and 0.5-μm exhibit pulsed threshold currents of 32 and 43 mA with slope efficiencies of 0.34 and 0.24 W/A, respectively. The device with a grating etch depth of 0.5-μm operates on a single longitudinal mode with about 40 dB side-mode suppression. All these results are from devices with Bragg condition wavelengths which are red-shifted from the peak spontaneous emission wavelength by over 400 /spl Aring/.