Details

Autor(en) / Beteiligte

• Andersson, M. A.
• Habibpour, O.
• Vukusic, J.
• Stake, J.

Titel

Resistive Graphene FET Subharmonic Mixers: Noise and Linearity Assessment

Ist Teil von

• IEEE transactions on microwave theory and techniques, 2012-12, Vol.60 (12), p.4035-4042

Ort / Verlag

IEEE

Erscheinungsjahr

2012

Quelle

IEEE Xplore

Beschreibungen/Notizen

• We report on the first complete RF characterization of graphene field-effect transistor subharmonic resistive mixers in the frequency interval f RF =2-5 GHz . The analysis includes conversion loss (CL), noise figure (NF), and intermodulation distortion. Due to an 8-nm thin Al 2 O 3 gate dielectric, the devices operate at only ~ 0 dBm of local oscillator (LO) power with an optimum measured CL in the range of 20-22 dB. The NF closely mimics the CL, thus determining the noise to be essentially thermal in origin, which is promising for cryogenic applications. The highest input third-order intercept point is measured to be 4.9 dBm at an LO power of 2 dBm.