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Resistive Graphene FET Subharmonic Mixers: Noise and Linearity Assessment
Ist Teil von
IEEE transactions on microwave theory and techniques, 2012-12, Vol.60 (12), p.4035-4042
Ort / Verlag
IEEE
Erscheinungsjahr
2012
Quelle
IEEE Xplore
Beschreibungen/Notizen
We report on the first complete RF characterization of graphene field-effect transistor subharmonic resistive mixers in the frequency interval f RF =2-5 GHz . The analysis includes conversion loss (CL), noise figure (NF), and intermodulation distortion. Due to an 8-nm thin Al 2 O 3 gate dielectric, the devices operate at only ~ 0 dBm of local oscillator (LO) power with an optimum measured CL in the range of 20-22 dB. The NF closely mimics the CL, thus determining the noise to be essentially thermal in origin, which is promising for cryogenic applications. The highest input third-order intercept point is measured to be 4.9 dBm at an LO power of 2 dBm.