Details

Autor(en) / Beteiligte

• Jae-Won Seo
• Hoon Oh
• Do-Hyun Kyung
• Myung-Ick Hwang
• Kyumin Lee
• Won-Jae Lee
• Eun-Chel Cho

Titel

Investigation of passivation properties of thermal Al2O3 and SiNx stack layers deposited on solar grade p-type CZ Si wafers

Ist Teil von

• 2011 37th IEEE Photovoltaic Specialists Conference, 2011, p.001512-001514

Ort / Verlag

IEEE

Erscheinungsjahr

2011

Quelle

IEEE

Beschreibungen/Notizen

• The passivation layer of Al 2 O 3 on the p-type CZ silicon wafers were carried out using a thermal ALD (atomic layer deposition), with the objective of realizing an industrial version of the PERL (passivated emitter, rear locally diffused) cells. The experiments were performed on bare wafers and device-like structures which have a textured front surface, phosphorus doped emitter, and antireflection coating layer. Different lifetime characteristics were shown with surface state depending on Al 2 O 3 and SiN x deposition. In the case of Al 2 O 3 /SiN x stacked layers on bare wafer, measured maximum minority carrier lifetime and implied voltage were 600 μs and 750mV, respectively. Maximum minority carrier lifetime and implied voltage for emitter sheet resistance of 100Ω/sq are 109 μs and 679mV before patterning and 88 μs and 673mV after patterning, respectively.