Details

Autor(en) / Beteiligte

• Yan Li
• Seungpil Lee
• Oowada, K.
• Hao Nguyen
• Qui Nguyen
• Mokhlesi, N.
• Hsu, C.
• Li, J.
• Ramachandra, V.
• Kamei, T.
• Higashitani, M.
• Pham, T.
• Honma, M.
• Watanabe, Y.
• Ino, K.
• Binh Le
• Byungki Woo
• Khin Htoo
• Tai-Yuan Tseng
• Pham, L.
• Tsai, F.
• Kwang-ho Kim
• Yi-Chieh Chen
• Min She
• Jong Yuh
• Chu, A.
• Chen Chen
• Puri, R.
• Hung-Szu Lin
• Yi-Fang Chen
• Mak, W.
• Huynh, J.
• Jim Chan
• Watanabe, M.
• Yang, D.
• Shah, G.
• Souriraj, P.
• Tadepalli, D.
• Tenugu, S.
• Gao, R.
• Popuri, V.
• Azarbayjani, B.
• Madpur, R.
• Lan, J.
• Yero, E.
• Feng Pan
• Hong, P.
• Jang Yong Kang
• Moogat, F.
• Yupin Fong
• Cernea, R.
• Huynh, S.
• Trinh, C.
• Mofidi, M.
• Shrivastava, R.
• Quader, K.

Titel

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode

Ist Teil von

• 2012 IEEE International Solid-State Circuits Conference, 2012, p.436-437

Ort / Verlag

IEEE

Erscheinungsjahr

2012

Quelle

IEEE

Beschreibungen/Notizen

• This paper addresses challenges with improvements made over previous NAND generations to achieve high performance while maintaining a low fail-bit count (FBC) and cost savings from an improved architecture and tightly packed peripheral circuits. Air gap [2,3] technology further improves write throughput by reducing neighbor interference and WL RC. A toggle mode 400Mb/s I/O interface reduces system overhead and enhances overall performance.