Details

Autor(en) / Beteiligte

• Bhat, K. P.
• Yuan-Bo Guo
• Yang Xu
• Baltis, T.
• Hazelmyer, D. R.
• Hopkins, D. C.

Titel

Results for an Al/AlN composite 350°C SiC solid-state circuit breaker module

Ist Teil von

• 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2012, p.2492-2498

Ort / Verlag

IEEE

Erscheinungsjahr

2012

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• This paper describes final results for the verification and testing of a SiC MOSFET-based solid-state circuit breaker power module for ultra-fast current interruption. The module exhibited a single-die (4.1mm × 4.1 mm) 48 A, 5 ms trip point from a 300 V bus with a di/dt of 2.1 kA/us (23 ns opening time). An internal snubber increased the response to 390 ns. The die absorbed ~4.6 J causing a transient junction temperature increase of ~245 °C. Ambient was set at 25 °C and 105 °C. Hence, maximum junction temperature was conservatively projected to reach 350 °C during the 5 ms pulse. An Aluminum composite structure was used for high temperature thermal management and high reliability. Testing of the final module surpassed 750 total cycles. Electrical, thermal and mechanical design and testing results are presented.