Details

Autor(en) / Beteiligte

• Hwang, E.
• Driscoll, A.
• Bhave, S. A.

Titel

Platform for JFET-based sensing of RF MEMS resonators in CMOS technology

Ist Teil von

• 2011 International Electron Devices Meeting, 2011, p.20.4.1-20.4.4

Ort / Verlag

IEEE

Erscheinungsjahr

2011

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore (IEEE/IET Electronic Library - IEL)

Beschreibungen/Notizen

• This paper presents an RF MEMS resonator with embedded junction field effect transistor (JFET) for efficient electrical detection of the high quality factor acoustic resonance. A homogenous single-crystal silicon resonator is excited in its fundamental thickness extensional resonant mode at 1.61 GHz with a quality factor of 25,900. This device can be fully integrated into a typical SOI CMOS technology with minimal modifications to the existing front-end process. Furthermore, it achieves an acoustic transconductance of 171 μS at a bias current of 143 μA, approaching a practical range for monolithic, low-power RF systems.