Details

Autor(en) / Beteiligte

• Kang, M. J.
• Park, T. J.
• Kwon, Y. W.
• Ahn, D. H.
• Kang, Y. S.
• Jeong, H.
• Ahn, S. J.
• Song, Y. J.
• Kim, B. C.
• Nam, S. W.
• Kang, H. K.
• Jeong, G. T.
• Chung, C. H.

Titel

PRAM cell technology and characterization in 20nm node size

Ist Teil von

• 2011 International Electron Devices Meeting, 2011, p.3.1.1-3.1.4

Ort / Verlag

IEEE

Erscheinungsjahr

2011

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• We reported characteristics of 20nm PRAM cell. Optimization of diode integration process and improved implantation technology were used to satisfy the required diode on-current (Ion) with low off-current (Ioff). Confined cell structure and novel bottom electrode (BE) materials were developed to reduce a reset current (Ireset) below 100uA. Using the advanced technologies, we successfully produced fully integrated 20nm node size PRAM device for the first time.