Details

Autor(en) / Beteiligte

• BeomYong Kim
• YunHyuck Ji
• SeungMi Lee
• BongSeok Jeon
• KeeJeung Lee
• Kwon Hong
• SungKi Park

Titel

The study of flat-band voltage shift using arsenic ion-implantation with High-k/Metal Inserted Poly Si gate stacks

Ist Teil von

• 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2011, p.79-82

Ort / Verlag

IEEE

Erscheinungsjahr

2011

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• The origin of flat band voltage shift phenomena using arsenic ion-implant in High-k/Metal Inserted Poly Si (HK/MIPS) gate stacks was investigated. Arsenic ion-implantations were carried out on HfSiO and HfSiON dielectric layers. Precise arsenic profile was obtained through front and backside SIMS analysis. From the electrical and physical analysis, we verified that the flat band voltage was shifted due to an arsenic dipole formation at high-k/metal interface. The negative shift of 480 mV was obtained with the optimized arsenic ion implant condition.