Details

Autor(en) / Beteiligte

• Burenkov, A.
• Pichler, P.
• Lorenz, J.
• Spiegel, Y.
• Duchaine, J.
• Torregrosa, F.

Titel

Simulation of plasma immersion ion implantation

Ist Teil von

• 2011 International Conference on Simulation of Semiconductor Processes and Devices, 2011, p.231-234

Ort / Verlag

IEEE

Erscheinungsjahr

2011

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• Ion implantation profiles of boron after a BF 3 plasma immersion ion implantation in a plasma implanter with a pulsed voltage ion extraction were investigated both experimentally and by means of numerical simulation. Boron profiles for different ion implantation doses in the range 10 15 to 10 17 cm -2 were measured using the SIMS method. Simulations were performed using a Monte-Carlo based binary-collision approach for ion implantation. A good reproduction of the measured boron profiles was obtained using a double-exponential energetic spectrum of the boron ions.