Details

Autor(en) / Beteiligte

• Arya, Ankur
• Johnson, G. M.
• Ronsheim, P.
• Nxumalo, J.
• Molella, C. M.
• Murphy, R. J.
• Seung Chul Lee
• Daleo, C.
• Bum Ki Moon
• Onoda, H.
• Chung Woh Lai
• Shenzhi Yang
• Chow, Yew Tuck Clament
• Lee, James

Titel

Leakage issues in failure analysis of p+ SiGe active area short monitor

Ist Teil von

• 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2011, p.1-4

Ort / Verlag

IEEE

Erscheinungsjahr

2011

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore

Beschreibungen/Notizen

• During technology development, leakage during inline or bench test of a p+ SiGe active areas short monitor structures may produce false short signal or hide real defect induced leakage. This paper investigates different sources of leakages - defects in SiGe, pressure due to tester probe on test pads, silicidation issues and boron P+ and arsenic N halo ion implants dose/energy. Some changes to mitigate the extraneous leakage are also presented in the paper.