18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2011, p.1-3
2011
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Details
- Autor(en) / Beteiligte
- Titel
- A study on off-state leakage current characteristics of asymmetric-metal-oxide-semiconductor field-effect transistors
- Ist Teil von
- 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2011, p.1-3
- Ort / Verlag
- IEEE
- Erscheinungsjahr
- 2011
- Quelle
- IEEE Xplore
- Beschreibungen/Notizen
- In this study, we extract the off-state current component from the asymmetric transistors in short channel 40 nm DRAM. Through a quantitative comparison of λ(DIBL coefficient), we explained by differences in deep high doped drain(nλ=0.1576) and shallow low doped drain(nλ = 0.0168) of off-stat current.
- Sprache
- Englisch
- Identifikatoren
- ISBN: 9781457701597, 1457701596ISSN: 1946-1542eISSN: 1946-1550DOI: 10.1109/IPFA.2011.5992715Titel-ID: cdi_ieee_primary_5992715
- Format
- –
- Schlagworte
- Junctions, Logic gates, MOSFETs, Random access memory, Subthreshold current