Details

Autor(en) / Beteiligte

• Gerhardt, N. C.
• Koukourakis, N.
• Klimasch, M.
• Funke, D. A.
• Hofmann, M. R.
• Kunert, B.
• Liebich, S.
• Trusheim, D.
• Zimprich, M.
• Volz, K.
• Stolz, W.

Titel

Time-resolved photoluminescence and optical gain of Ga(NAsP) heterostructures pseudomorphically grown on silicon (001) substrate

Ist Teil von

• 2011 13th International Conference on Transparent Optical Networks, 2011, p.1-4

Ort / Verlag

IEEE

Erscheinungsjahr

2011

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• The novel metastable dilute nitride material Ga(NAsP) is a very promising candidate for electrically pumped lasers on silicon because it can be pseudomorphically grown on silicon substrate. Here we investigate the optical properties of a series of multi-quantum well Ga(NAsP) samples grown lattice matched on GaP and Si substrates. Temperature and excitation resolved photoluminescence spectroscopy indicates a significant impact of disorder-induced carrier localization effects on the optical properties. On the other hand, optical gain measurements reveal high modal gain up to 80 cm -1 at room temperature and demonstrate the suitability of this new material as an active material for laser devices. A comparative analysis of optical gain and photoluminescence data demonstrates a strong impact of the barrier-growth conditions on the optical quality of the material.