Details

Autor(en) / Beteiligte

• He Liu
• Salomonsen, G.
• Kaiying Wang
• Aasmundtveit, K. E.
• Hoivik, N.

Titel

Wafer-Level Cu/Sn to Cu/Sn SLID-Bonded Interconnects With Increased Strength

Ist Teil von

• IEEE transactions on components, packaging, and manufacturing technology (2011), 2011-09, Vol.1 (9), p.1350-1358

Ort / Verlag

Piscataway, NJ: IEEE

Erscheinungsjahr

2011

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Wafer level Cu-Sn solid liquid interdiffusion (SLID) bonding of interconnects was achieved by bonding two-layered Cu/Sn structures to each other. The bonded interconnects were investigated by mechanical, electrical and microscopic techniques. The Cu-Sn SLID interconnects were created by wafer-level bonding at 260°C. The bonded interconnects show shear strength of 45 MPa and a resistance of the order 100 mΩ . A major advantage of the Cu/Sn to Cu/Sn bonding scenario is to avoid the dynamic wetting of molten Sn to Cu, and simply replace with a liquid to liquid integration. Furthermore, the Sn overflow problem in a Cu/Sn SLID system was successfully addressed by designing a margin of 15 μm at the Cu pads to tolerate any Sn spreading. The uniformity requirement for electroplated Cu-Sn layers, which is crucial for achieving successful wafer-level bonding, is discussed. This wafer-level Cu-Sn SLID bonding process is a promising technique for 3-D assembly and packaging.