Details

Autor(en) / Beteiligte

• Kardo-Sysoev, A.F.
• Efanov, V.M.
• Chashnikov, I.G.

Titel

Fast power switches from picosecond to nanosecond time scale and their application to pulsed power

Ist Teil von

• Digest of Technical Papers. Tenth IEEE International Pulsed Power Conference, 1995, Vol.1, p.342-347 vol.1

Ort / Verlag

IEEE

Erscheinungsjahr

1995

Quelle

IEEE/IET Electronic Library

Beschreibungen/Notizen

• New methods of pulsed power are developed on the basis of new effects in high voltage semiconductor p-n junctions, discovered at Ioffe Physico-Technical Institute, Russia. These effects are: (a) super fast voltage restoration; and (b) super fast reversible delayed breakdown. These effects have been used to design two types of semiconductor device: (1) opening switches-drift step recovery devices (DSRD) with turn off times 0.5-2.0 ns at operating voltages 0.5-2.0 kV for one p-n junction; and (2) closing switches-silicon avalanche shapers (SAS) with turn on times 50-200 ps at operating voltage 3-10 kV for one p-n junction. DSRD may be considered as a solid state replacement for plasma opening switches and SAS may be considered as a replacement for overvoltaged spark gaps. Both types of devices may be assembled in a stack (piled) with dozens of p-n junctions to increase operating voltages. Estimations show that operating voltage for the stack can reach 1 MV in the case of DSRD with turn off time /spl sim/1 ns and hundreds kV in the case of SAS with turn on times /spl sim/0.1 ns. It is possible to switch all areas of devices uniformly up to the limitations imposed by skin effect. Estimations show maximum switching current up to 10 kA for DSRD and >2 kA for SAS.