Details

Autor(en) / Beteiligte

• Chindalore, G.
• Hareland, S.
• Jallepalli, S.
• Fasch, A.F.
• Maziar, C.M.
• Chia, V.K.F.
• Smith, S.

Titel

Test structure and methodology for experimental extraction of threshold voltage shifts due to quantum mechanical effects in MOS inversion layers

Ist Teil von

• 1997 IEEE International Conference on Microelectronic Test Structures Proceedings, 1997, p.165-168

Ort / Verlag

IEEE

Erscheinungsjahr

1997

Quelle

IEEE Xplore

Beschreibungen/Notizen

• This paper reports the test structure and methodology that has been developed to experimentally extract the threshold voltage shifts </spl Delta/V/sub T/> due to quantum mechanical (QM) effects in both electron and hole MOS inversion layers. Compared to classical calculations, which ignore QM effects, these effects are found to cause a significant increase in the threshold voltage on the order of 100 mV in MOSFET devices fabricated with oxide thicknesses and doping levels anticipated for technologies with gate lengths /spl les/0.25 /spl mu/m. /spl Delta/V/sub T/ has been extracted from experimental devices with doping levels ranging from 5/spl times/10/sup 15/ cm/sup -3/ to 1/spl times/10/sup 18/ cm/sup -3/, and recently developed theoretical models are found to agree well with the results. Emphasis has been placed on developing a suitable test structure and methodology which enables the extraction of QM effects with little known error.