Details

Autor(en) / Beteiligte

• Brown, D. W.
• Abbas, M.
• Ginart, A.
• Ali, I. N.
• Kalgren, P. W.
• Vachtsevanos, G. J.

Titel

Turn-Off Time as an Early Indicator of Insulated Gate Bipolar Transistor Latch-up

Ist Teil von

• IEEE transactions on power electronics, 2012-02, Vol.27 (2), p.479-489

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2012

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• In this paper, effects preceding a latch-up fault in insulated gate bipolar transistors (IGBTs) are studied. Primary failure modes associated with IGBT latch-up faults are reviewed. Precursors to latch-up, primarily an increase in turn-off time as a consequence of elevated junction temperature, are examined for an IGBT. The relationship between junction temperature and turn-off time is explained by modeling the parasitic properties of an IGBT. A metric is derived from the model to standardize the relative estimates in junction temperature from measurements of turn-off time. To evaluate the effects preceding latch-up in-situ, seeded fault testing is conducted on a three-phase power inverter using aged transistors induced with a fault located in the die-attach solder layer. Experimental results demonstrated the feasibility of using the proposed metric as a precursor to transistor latch-up.