Details

Autor(en) / Beteiligte

• Storasta, L.
• Rahimo, M.
• Bellini, M.
• Kopta, A.
• Vemulapati, U. R.
• Kaminski, N.

Titel

The radial layout design concept for the Bi-mode insulated gate transistor

Ist Teil von

• 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011, p.56-59

Ort / Verlag

IEEE

Erscheinungsjahr

2011

Quelle

IEEE Xplore

Beschreibungen/Notizen

• In this paper we present a new radial design concept for an optimized layout of anode shorts in the Bi-mode Insulating Gate Transistor (BiGT). The study shows that the arrangement of the n + -stripes plays a key role for the on-state characteristics of the BiGT. With the aid of 3D device simulations the visualization of the plasma distribution during the on-state conduction was obtained in a 0.25 × 4 mm 2 large BiGT model area. The influence of the dimensioning and layout of the anode shorts was simulated and compared with measured on-state curves. A clear improvement of plasma distribution in the device when the stripes are arranged orthogonally (radially) to the pilot-IGBT boundary is observed in 3D simulations. Measurements confirm lower on-state losses as a result of better utilization of the device area.