Details

Autor(en) / Beteiligte

• Choul-Joo Ko
• Cheol-Ho Cho
• Min-Seok Kim
• Hyung-Gyun Jung
• Hee-Bae Lee
• Yong-Jun Lee
• Min-Woo Kim
• Sung-Mo Gu
• Sun-Kyung Bang
• Han-Geon Kim
• Sun-Kyoung Kang
• Kwang-Dong Yoo
• Hutter, L.

Titel

Implementation of fully isolated Low Vgs nLDMOS with low specific on-resistance

Ist Teil von

• 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011, p.24-27

Ort / Verlag

IEEE

Erscheinungsjahr

2011

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• In this paper, we present a new isolated Low Vgs NLDMOS in 0.35um BCDMOS process. The proposed LDMOS is fully isolated from substrate and has very lower Rsp(specific on-resistance) than other competitors. This device can apply a negative bias to drain and it can be used in AMOLED application. The proposed LDMOS devices in 30-40V ranges have the lowest Rsp with other competitors in 0.13-0.35um BCDMOS technologies. And the Rsp of the proposed LDMOS in 40V range is 46.3% lower than Low Vgs LDMOS last reported. And the isolation efficiency of the proposed LDMOS has very good performance. Furthermore, a logic CMOS and all the other components are compatible in the proposed process.