Details

Autor(en) / Beteiligte

• Bahl, I.J.
• Drinkwine, M.J.
• Geissberger, A.E.
• Griffin, E.L.
• Grzyb, J.A.

Titel

Multifunction SAG process for high-yield, low-cost GaAs microwave integrated circuits

Ist Teil von

• IEEE transactions on microwave theory and techniques, 1990-09, Vol.38 (9), p.1175-1182

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

1990

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• A new fully planar, multifunction refractory self-aligned gate (MSAG) technology suitable for the fabrication of GaAs small-signal and power microwave monolithic integrated circuits (MMICs) is demonstrated in a manufacturing environment. Data on the distribution of DC and RF performance and yield for pilot production of discrete FETs and MMICs are presented. The heart of the MSAG process is a planar, self-aligned gate FET. It uses a refractory TiWN Schottky gate and exhibits high performance for small-signal microwave, power microwave, and digital circuit applications. Lots with good wafer yields have demonstrated average chip yields on PCM good wafers of 45%, 49%, and 36% for 2-10-GHz distributed amplifiers, 1-W C-band power amplifiers, and 4-W power amplifiers, respectively.< >