A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency Reference for Wireless Sensor Networks
2011
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- Autor(en) / Beteiligte
- Titel
- A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency Reference for Wireless Sensor Networks
- Ist Teil von
- IEEE journal of solid-state circuits, 2011-07, Vol.46 (7), p.1544-1552
- Ort / Verlag
- New York: IEEE
- Erscheinungsjahr
- 2011
- Quelle
- IEEE Xplore Digital Library
- Beschreibungen/Notizen
- A temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125°C , the frequency spread of the complete reference is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm 2 and draws 42.6 μA from a 1.2-V supply at room temperature.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0018-9200eISSN: 1558-173XDOI: 10.1109/JSSC.2011.2143630Titel-ID: cdi_ieee_primary_5768040
- Format
- –
- Schlagworte
- Accuracy, Charge carrier mobility, Circuits, CMOS, CMOS integrated circuits, crystal-less clock, Electron mobility, Frequency conversion, frequency reference, low voltage, Metal oxide semiconductors, MOSFET, Networks, Oscillators, Sensors, sigma-delta modulation, smart sensors, Spreads, Temperature, temperature compensation, Temperature measurement, Temperature sensors, ultra-low power, Wireless communication, Wireless sensor networks