Details

Autor(en) / Beteiligte

• Siligaris, A
• Richard, O
• Martineau, B
• Mounet, C
• Chaix, F
• Ferragut, R
• Dehos, C
• Lanteri, J
• Dussopt, L
• Yamamoto, S D
• Pilard, R
• Busson, P
• Cathelin, A
• Belot, D
• Vincent, P

Titel

A 65nm CMOS fully integrated transceiver module for 60GHz wireless HD applications

Ist Teil von

• 2011 IEEE International Solid-State Circuits Conference, 2011, p.162-164

Ort / Verlag

IEEE

Erscheinungsjahr

2011

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• This paper presents a fully integrated 60GHz transceiver module in a 65nm CMOS technology for wireless high-definition video streaming. The CMOS chip is compatible with the WirelessHD™ standard, covers the four channels and supports 16-QAM OFDM signals including the analog baseband. The ESD-protected die (9.3mm2) is flip-chipped atop a High Temperature Cofired Ceramic (HTCC) substrate, which receives also an external PA and the emission and reception glass-substrate antennas. The module occupies an area of only 13.5χ8.5mm2. It consumes 454mW in receiver mode and 1.357W in transmitter mode (357mW for the transmitter and 1W for the PA).