Details

Autor(en) / Beteiligte

• Jian Wang
• Mingbin Yu
• Guoqiang Lo
• Dim-Lee Kwong
• Sungjoo Lee

Titel

Silicon Waveguide Integrated Germanium JFET Photodetector With Improved Speed Performance

Ist Teil von

• IEEE photonics technology letters, 2011-06, Vol.23 (12), p.765-767

Ort / Verlag

IEEE

Erscheinungsjahr

2011

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• This letter reports our recent results on the high-speed silicon-waveguided germanium junction-field-effect-transistor (JFET)-based photodetector. Although the Ge layer's footprint on wafer is as small as 2 μm × 2 μm, low standby current (0.5 μA at 1 V), high responsivity (642 mA/W), and high speed (8 GHz) are achieved. The reported Ge JFET is a promising solution for photodetector's further scaling-down.