Details

Autor(en) / Beteiligte

• Kim, D.S.
• Lee, S.Y.
• Lee, J.H.
• Oh, G.S.
• Kim, N.J.
• Lee, J.W.
• Kim, A.S.
• Sin, Y.K.

Titel

Fabrication of planar InP/InGaAs avalanche photodiode without guard rings

Ist Teil von

• Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society, 1996, Vol.2, p.332-333 vol.2

Ort / Verlag

IEEE

Erscheinungsjahr

1996

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• An avalanche photodiode (APD) without guard rings is described. Single growth InP-InGaAs separate absorption grading charge sheet multiplication (SAGCM) APDs has been fabricated to suppress the edge breakdown. A very low dark current of 0.77 nA at 0.98 of the breakdown voltage (V/sub B/) and M=90 at 1.5 /spl mu/A of primary photocurrent was measured for a 50 /spl mu/m-diameter device. The gain-bandwidth product was estimated 64 GHz.