Details

Autor(en) / Beteiligte

• SungJin Whang
• KiHong Lee
• DaeGyu Shin
• BeomYong Kim
• MinSoo Kim
• JinHo Bin
• JiHye Han
• SungJun Kim
• BoMi Lee
• YoungKyun Jung
• SungYoon Cho
• ChangHee Shin
• HyunSeung Yoo
• SangMoo Choi
• Kwon Hong
• Aritome, Seiichi
• SungKi Park
• SungJoo Hong

Titel

Novel 3-dimensional Dual Control-gate with Surrounding Floating-gate (DC-SF) NAND flash cell for 1Tb file storage application

Ist Teil von

• 2010 International Electron Devices Meeting, 2010, p.29.7.1-29.7.4

Ort / Verlag

IEEE

Erscheinungsjahr

2010

Quelle

IEEE/IET Electronic Library

Beschreibungen/Notizen

• A novel 3-dimensional Dual Control-gate with Surrounding Floating-gate (DC-SF) NAND flash cell has been successfully developed, for the first time. The DC-SF cell consists of a surrounding floating gate with stacked dual control gate. With this structure, high coupling ratio, low voltage cell operation (program: 15V and erase: -11V), and wide P/E window (9.2V) can be obtained. Moreover, negligible FG-FG interference (12mV/V) is achieved due to the control gate shield effect. Then we propose 3D DC-SF NAND flash cell as the most promising candidate for 1Tb and beyond with stacked multi bit FG cell (2 ~ 4bit/cell).