Details

Autor(en) / Beteiligte

• Wu, Y Q
• Lin, Y.-M
• Jenkins, K A
• Ott, J A
• Dimitrakopoulos, C
• Farmer, D B
• Xia, F
• Grill, A
• Antoniadis, D A
• Avouris, Ph

Titel

RF performance of short channel graphene field-effect transistor

Ist Teil von

• 2010 International Electron Devices Meeting, 2010, p.9.6.1-9.6.3

Ort / Verlag

IEEE

Erscheinungsjahr

2010

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• In this paper, the authors present experimental studies on transport characteristics of graphene FETs with channel lengths down to 70 nm. The factors limiting the performance of short channel graphene devices are discussed. RF performance of a sub-100 nm graphene transistor fabricated on epitaxial graphene grown on a SiC substrate is also presented. A cut-off frequency as high as 170 GHz is achieved in a 90 nm graphene FET using a scalable top-down fabrication processes. Our results indicate that further improvement of RF performance of graphene FETs can be enabled by channel length scaling with structure optimization and contact resistance reduction.