Details

Autor(en) / Beteiligte

• Ďurina, P
• Štefečka, M
• Roch, T
• Noskovič, J
• Trgala, M
• Pidík, A
• Kostič, I
• Konečniková, A
• Matay, L
• Kúš, P
• Plecenik, P

Titel

Patterning of nanometer structures by using direct-write e-beam lithography for the sensor development

Ist Teil von

• The Eighth International Conference on Advanced Semiconductor Devices and Microsystems, 2010, p.89-92

Ort / Verlag

IEEE

Erscheinungsjahr

2010

Quelle

IEEE Xplore

Beschreibungen/Notizen

• In this work, the optimalisation of e-beam parameters and the writing strategy have been performed. Various positive and negative e-beam resists have been evaluated for high resolution e-beam lithography and pattern transfer. Both, lift-off method and ion beam etching have been investigated for the pattern transfer into thin Pt and MoC layer on saphire substrate.