Details

Autor(en) / Beteiligte

• Minghui You
• Xin Gao
• Zhan Guo Li
• Guojun Liu
• Lin Li
• Mei Li
• Yong Gang Zou
• Xiaohua Wang
• Baoxue Bo

Titel

2.0 µm multiple quantum-wells InGaAsSb/AlGaAsSb laser diode operating continuous wave at room temperature

Ist Teil von

• 2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser TechnologyOptoelectronics Technology (ASOT), 2010, p.33-35

Ort / Verlag

IEEE

Erscheinungsjahr

2010

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• The multiple quantum wells (MQWs) InGaAsSb/AlGaAsSb laser diodes (LDs) with an emission wavelength around 2.0μm were designed and fabricated by molecular beam epitaxy (MBE). The good performance of LD was achieved, with the low threshold current of 225 mA, and the slope efficiency of 0.23 W/A, respectively. The maximum outpower of 16 mW at 500 mA drive current was obtained at room temperature(RT).