Details

Autor(en) / Beteiligte

• Ju-Heon Yoon
• Kwan-Hee Yoon
• Jong-Keun Kim
• Won-Mok Kim
• Jong-Keuk Park
• Taek Sung Lee
• Young-Joon Baik
• Tae-Yeon Seong
• Jeung-hyun Jeong

Titel

Effect of the Mo back contact microstructure on the preferred orientation of CIGS thin films

Ist Teil von

• 2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.002443-002447

Ort / Verlag

IEEE

Erscheinungsjahr

2010

Quelle

IEEE Xplore

Beschreibungen/Notizen

• The effect of varying microstructures of Mo films on CIGS preferred orientation has been studied by changing Mo working pressure (in sputtering). CIGS I(220)/I(112) and IGS I(300)/I(006) have strong dependencies of the residual stress of Mo closely related to its microstructures: they increases with Mo pressure and then gradually decreases with Mo pressure, as the residual stress does. The trend is exactly opposite to the known effect due to Na. Thus this work shows that Mo microstructure itself can determine IGS and CIGS textures without assistance of other factors such as Na. XRD analysis on selenized Mo and TEM work on IGS/Mo show that MoSe 2 reactivity itself influences the IGS texture more than its orientation. In addition, MoSe 2 reactivity depends on the in-grain density of Mo which is linearly related to the residual stress.