Details

Autor(en) / Beteiligte

• Mody, J.
• Kambham, A.K.
• Zschatzsch, G.
• Schatzer, P.
• Chiarella, T.
• Collaert, N.
• Witters, L.
• Jurczak, M.
• Horiguchi, N.
• Gilbert, M.
• Eyben, P.
• Kolling, S
• Schulze, A.
• Hoffmann, T-Y.
• Vandervorst, W.

Titel

Dopant and carrier profiling in FinFET-based devices with sub-nanometer resolution

Ist Teil von

• 2010 Symposium on VLSI Technology, 2010, p.195-196

Ort / Verlag

IEEE

Erscheinungsjahr

2010

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Atom probe tomography (APT) in conjunction with scanning spreading resistance microscopy (SSRM) is demonstrated for the first time to profile dopant and carrier distributions in FinFET-based devices with sub-nanometer resolution. These two techniques together provide information on the degree of conformality, the dose retention and the dopant activation. These results are also compared with a methodology involving secondary ion mass spectrometry (SIMS). Ion implantation for increased conformality of source/drain extensions is demonstrated for tilted implants, which clearly leads to improved device performance.