Details

Autor(en) / Beteiligte

• Liu, Q
• Yagishita, A
• Loubet, N
• Khakifirooz, A
• Kulkarni, P
• Yamamoto, T
• Cheng, K
• Fujiwara, M
• Cai, J
• Dorman, D
• Mehta, S
• Khare, P
• Yako, K
• Zhu, Y
• Mignot, S
• Kanakasabapathy, S
• Monfray, S
• Boeuf, F
• Koburger, C
• Sunamura, H
• Ponoth, S
• Reznicek, A
• Haran, B
• Upham, A
• Johnson, R
• Edge, L F
• Kuss, J
• Levin, T
• Berliner, N
• Leobandung, E
• Skotnicki, T
• Hane, M
• Bu, H
• Ishimaru, K
• Kleemeier, W
• Takayanagi, M
• Doris, B
• Sampson, R

Titel

Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

Ist Teil von

• 2010 Symposium on VLSI Technology, 2010, p.61-62

Ort / Verlag

IEEE

Erscheinungsjahr

2010

Quelle

IEEE/IET Electronic Library

Beschreibungen/Notizen

• We present UTBB devices with a gate length (L G ) of 25nm and competitive drive currents. The process flow features conventional gate-first high-k/metal and raised source/drains (RSD). Back bias (V bb ) enables V t modulation of more than 125mV with a V bb of 0.9V and BOX thickness of 12nm. This demonstrates the importance and viability of the UTBB structure for multi-V t and power management applications. We explore the impact of GP, BOX thickness and V bb on local V t variability for the first time. Excellent A Vt of 1.27 mV·μm is achieved. We also present simulations results that suggest UTBB has improved scalability, reduced gate leakage (I g ) and lower external resistance (R ext ), thanks to a thicker inversion gate dielectric (T inv ) and body (T si ) thickness.