Details

Autor(en) / Beteiligte

• Kwang-Young Ko
• Il-Yong Park
• Yong-Keon Choi
• Chul-Jin Yoon
• Ju-Hyoung Moon
• Kyung-Min Park
• Hyon-Chol Lim
• Soon-Yeol Park
• Nam-Joo Kim
• Kwang-Dong Yoo
• Hutter, L N

Titel

BD180LV - 0.18 μm BCD technology with best-in-class LDMOS from 7V to 30V

Ist Teil von

• 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, p.71-74

Ort / Verlag

IEEE

Erscheinungsjahr

2010

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• 0.18μm BCD technology with the best-in-class nLDMOS is presented. The drift of nLDMOS is optimized to ensure lowest Rsp by using multi-implants and appropriate thermal recipe. The optimized 24V nLDMOS has BV DSS =36V and Rsp=14.5 mΩ-mm 2 . Electrical SOA and long-term hot electron (HE) SOA are also evaluated. The maximum operating voltage less than 10% degradation of on-resistance is 24.4V.