Details

Autor(en) / Beteiligte

• Sleight, J.W.
• Rios, R.

Titel

A continuous compact MOSFET model for SOI with automatic transitions between fully and partially depleted device behavior

Ist Teil von

• International Electron Devices Meeting. Technical Digest, 1996, p.143-146

Ort / Verlag

IEEE

Erscheinungsjahr

1996

Quelle

IEEE Xplore

Beschreibungen/Notizen

• A fully continuous compact SOI model for circuit simulations, that automatically accounts for the correct body depletion condition, is presented. Unlike previously reported models that are derived for either fully-depleted (FD) or partially-depleted (PD) devices, the model described here accounts for the possible transitions between FD and PD behavior during the device operation.