IEEE photonics technology letters, 2010-08, Vol.22 (16), p.1253-1255
2010
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Details
- Autor(en) / Beteiligte
- Titel
- 340-W Peak Power From a GaSb 2- \mum Optically Pumped Semiconductor Laser (OPSL) Grown Mismatched on GaAs
- Ist Teil von
- IEEE photonics technology letters, 2010-08, Vol.22 (16), p.1253-1255
- Ort / Verlag
- IEEE
- Erscheinungsjahr
- 2010
- Quelle
- IEEE Electronic Library (IEL)
- Beschreibungen/Notizen
- A GaSb-based vertical external cavity laser at 2 μm was pumped by 100- to 160-ns pulses from a Nd : YAG laser at 1.064 μm operating at 1 kHz. It was shown that the output power scales with the pump spot diameter to the extent of our experiments. A peak output of over 340 W was obtained.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 1041-1135eISSN: 1941-0174DOI: 10.1109/LPT.2010.2052596Titel-ID: cdi_ieee_primary_5512584