Details

Autor(en) / Beteiligte

• Galy, P
• Bourgeat, J
• Jimenez, J
• Entringer, C
• Dray, A
• Jacquier, B

Titel

Comparison between isolated SCR & embedded dual isolated SCR power devices for ESD power clamp in C45nm CMOS technology

Ist Teil von

• 2010 IEEE International Conference on Integrated Circuit Design and Technology, 2010, p.47-50

Ort / Verlag

IEEE

Erscheinungsjahr

2010

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• The Electrostatic Discharge (ESD) protection for advanced CMOS technologies is a challenge due to the technology scaling down. The main purpose of this paper is to present and compare silicon results in C45nm CMOS technology of a single pitch ESD protection using isolated Silicon Controlled Rectifier (SCR) and dual isolated SCR. These two protection structures with dynamic trigger circuit will be compared. Also, the power pad clamps in 1 pitch IO are qualified through 100 ns TLP. Silicon result show that ESD robustness reaches 4 kV HBM, 200 V MM and 500 V CDM for a 64 BGA package. IO power pads are also immune to Latch Up and power sequence.