Details

Autor(en) / Beteiligte

• Haond, M.
• Bomchil, G.
• Regolini, J-L.
• Bensahel, D.
• Dutartre, D.
• Vu, D-P.
• Barla, K.
• Halimaoui, H.
• Herino, R.
• Monroy, A.
• Thouret, S.
• Gris, Y.

Titel

Electrical Parameters of SOI Material Obtained by ZMR and Oxidized Porous Silicon

Ist Teil von

• ESSDERC '87: 17th European Solid State Device Research Conference, 1987, p.385-390

Ort / Verlag

IEEE

Erscheinungsjahr

1987

Quelle

IEEE

Beschreibungen/Notizen

• Lamp-Zone Melting Recrystallization (ZMR) of deposited silicon on oxide has proved to be suitable for making devices. We present here electrical results obtained in this material on batches of 4-in. wafers, which confirm its crystalline quality. We also present recent results obtained in S0I material prepared by oxidizing a buried porous layer. Since laser-ZMR is still in the race toward the fabrication of a material compatible with 3-D circuits fabrication, some new results are periodically available. By presenting electrical results of the three types of material, we compare and discuss the future trends in SOI concerning each of these three techniques.