Details

Autor(en) / Beteiligte

• DerChang Kau
• Tang, S.
• Karpov, I.V.
• Dodge, R.
• Klehn, B.
• Kalb, J.A.
• Strand, J.
• Diaz, A.
• Leung, N.
• Wu, J.
• Lee, S.
• Langtry, T.
• Kuo-wei Chang
• Papagianni, C.
• Jinwook Lee
• Hirst, J.
• Erra, S.
• Flores, E.
• Righos, N.
• Castro, H.
• Spadini, G.

Titel

A stackable cross point Phase Change Memory

Ist Teil von

• 2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

Ort / Verlag

IEEE

Erscheinungsjahr

2009

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore

Beschreibungen/Notizen

• A novel scalable and stackable nonvolatile memory technology suitable for building fast and dense memory devices is discussed. The memory cell is built by layering a storage element and a selector. The storage element is a Phase Change Memory (PCM) cell and the selector is an Ovonic Threshold Switch (OTS). The vertically integrated memory cell of one PCM and one OTS (PCMS) is embedded in a true cross point array. Arrays are stacked on top of CMOS circuits for decoding, sensing and logic functions. A RESET speed of 9 nsec and endurance of 10 6 cycles are achieved. One volt of dynamic range delineating SET vs. RESET is also demonstrated.