Details

Autor(en) / Beteiligte

• Pookpanratana, S.
• Repins, I.
• Bar, M.
• Felix, R.
• Blum, M.
• Weinhardt, L.
• Yang, W.
• Denlinger, J.D.
• Contreras, M.A.
• Heske, C.

Titel

Spectroscopic analysis of the chemical structure at the CdS/Cu(In,Ga)Se2 interface in high-efficiency solar cell devices

Ist Teil von

• 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, p.001060-001063

Ort / Verlag

IEEE

Erscheinungsjahr

2009

Quelle

IEEE Xplore

Beschreibungen/Notizen

• High-efficiency Cu(In 1-x Ga x )Se 2 (CIGSe)-based solar cells utilize a CdS buffer layer between the window and the chalcopyrite absorber. Soft x-ray spectroscopies were employed to investigate the chemical properties of the CdS/CIGSe interface and its dependence on the details of the chemical bath deposition (CBD) of CdS. We have investigated the CdS/CIGSe interface after various CdS CBD times (0, 4, and 12.5 minutes). We find evidence for the presence of Cd(OH) 2 at the CdS/CIGSe surface for the thickest CdS sample.