Details

Autor(en) / Beteiligte

• Gleskova, N.
• Wagner, S.
• Shen, D.S.

Titel

Electrophotographic patterning of a-Si:H

Ist Teil von

• Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays, 1995, p.16-19

Ort / Verlag

IEEE

Erscheinungsjahr

1995

Link zum Volltext

• IEEE_Xplore

Quelle

IEL

Beschreibungen/Notizen

• We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 /spl mu/m thick a-Si:H films deposited on /spl sim/50 /spl mu/m thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.