Details

Autor(en) / Beteiligte

• Rehak, P.
• De Geronimo, G.
• Ackley, K.
• Carini, G.
• Wei Chen
• Fried, J.
• Keister, J.
• Shaorui Li
• Zheng Li
• Pinelli, D.A.
• Siddons, D.P.
• Vernon, E.
• Gaskin, J.A.
• Ramsey, B.D.
• Tyson, T.A.

Titel

ASIC for SDD-based X-ray spectrometers

Ist Teil von

• 2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC), 2009, p.1088-1095

Ort / Verlag

IEEE

Erscheinungsjahr

2009

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• We present an application-specific integrated circuit (ASIC) for high-resolution x-ray spectrometers (XRS). The ASIC reads out signals from pixelated silicon drift detectors (SDDs). The pixel does not have an integrated field effect transistor (FET); rather, readout is accomplished by wire-bonding the anodes to the inputs of the ASIC. The ASIC dissipates 32 mW, and offers 16 channels of low-noise charge amplification, high-order shaping with baseline stabilization, discrimination, a novel pile-up rejector, and peak detection with an analog memory. The readout is sparse and based on custom low-power tristatable low-voltage differential signaling (LPT-LVDS). A unit of 64 SDD pixels, read out by four ASICs, covers an area of 12.8 cm 2 and dissipates with the sensor biased about 15 mW/cml As a tile-based system, the 64-pixel units cover a large detection area. Our preliminary measurements show a FWHM of 145 eV at the 5.9 keV peak of a 55 Fe source, and less than 80 eV on a test-pulse line at 200 eV.