2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC), 2009, p.1649-1652
2009
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Details
- Autor(en) / Beteiligte
- Titel
- 200 mm silicon wafer processing for large area strip detectors
- Ist Teil von
- 2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC), 2009, p.1649-1652
- Ort / Verlag
- IEEE
- Erscheinungsjahr
- 2009
- Quelle
- IEEE Electronic Library Online
- Beschreibungen/Notizen
- We developed large silicon single-sided strip detectors made of 200 mm float-zone Si wafers. The single-sided silicon strip detectors have an effective active area of 156 cm 2 and 725 ¿m in thickness and were fully depleted. Basic performance was measured using Am-241 and Co-57 sources. The leakage current varied from strip to strip due to some contaminations during the processing.
- Sprache
- Englisch
- Identifikatoren
- ISBN: 9781424439614, 1424439612ISSN: 1082-3654eISSN: 2577-0829DOI: 10.1109/NSSMIC.2009.5402245Titel-ID: cdi_ieee_primary_5402245
- Format
- –
- Schlagworte
- Conductivity, Detectors, Fabrication, Laboratories, Lithography, Pediatrics, Pollution measurement, Semiconductor diodes, Silicon, Strips