IEEE electron device letters, 2010-01, Vol.31 (1), p.77-79
2010
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Details
- Autor(en) / Beteiligte
- Titel
- Validation of Retention Modeling as a Trap-Profiling Technique for SiN-Based Charge-Trapping Memories
- Ist Teil von
- IEEE electron device letters, 2010-01, Vol.31 (1), p.77-79
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 2010
- Quelle
- IEEE/IET Electronic Library (IEL)
- Beschreibungen/Notizen
- We applied the developed trap spectroscopy by charge injection and sensing to validate the extraction of the silicon nitride trap distribution (both in space and energy) from the modeling of retention transients of charge-trapping memories. We compared three different types of silicon nitrides using these two techniques, and similar distributions were extracted, thus confirming the validity of the charge profiles resulting from the modeling of retention transients and the physics of the proposed model, based on two main mechanisms of charge loss: Poole-Frenkel emission (dominating at high temperature) and direct tunneling (dominating at room temperature).
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0741-3106eISSN: 1558-0563DOI: 10.1109/LED.2009.2035718Titel-ID: cdi_ieee_primary_5339234
- Format
- –
- Schlagworte
- Applied sciences, Charge measurement, Charge profile, charge trapping (CT), Current measurement, Electronics, Exact sciences and technology, Integrated circuits, Integrated circuits by function (including memories and processors), Magnetic and optical mass memories, Monitoring, Performance evaluation, retention modeling, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Si-rich, Silicon compounds, SiN, SiON, Solid modeling, Space charge, Spectroscopy, Storage and reproduction of information, TANOS, Temperature distribution, Temperature sensors, trap spectroscopy by charge injection and sensing (TSCIS)