2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009, p.47-49
2009
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Details
- Autor(en) / Beteiligte
- Titel
- Investigation of the details of silicon nanowhisker growth by Monte Carlo simulation
- Ist Teil von
- 2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009, p.47-49
- Ort / Verlag
- IEEE
- Erscheinungsjahr
- 2009
- Quelle
- IEEE Electronic Library (IEL)
- Beschreibungen/Notizen
- Silicon nanowhisker (NW) growth was investigated by Monte Carlo simulation. Dependence of NW growth rate on radius R was obtained. Growth rate was found to be proportional to 1/R 2 for diffusion growth mode and radius independent for adsorption mode.
- Sprache
- Englisch
- Identifikatoren
- ISBN: 9781424455348, 1424455340DOI: 10.1109/INTERNANO.2009.5335639Titel-ID: cdi_ieee_primary_5335639
- Format
- –
- Schlagworte
- Crystallization, Crystals, Gold, Mechanical factors, Molecular beam epitaxial growth, Monte Carlo, Monte Carlo methods, Nanobioscience, Nanowhisker, Seminars, Silicon, simulation, Substrates