Details

Autor(en) / Beteiligte

• Bettidi, A.
• Cetronio, A.
• Cicolani, M.
• Costrini, C.
• Lanzieri, C.
• Maccaroni, S.
• Marescialli, L.
• Peroni, M.
• Romanini, P.

Titel

X-band T/R module in state-of-the-art GaN technology

Ist Teil von

• 2009 European Radar Conference (EuRAD), 2009, p.258-261

Ort / Verlag

IEEE

Erscheinungsjahr

2009

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• In this paper a first iteration X-band T/R module based on a GaN-HEMT MMIC Front-End chip-set, comprising a power amplifier, robust low-noise amplifier and power switch will be presented. Even though ultimate T/R module performance cannot be achieved with current GaN-HEMT technological maturity the impact that this technology can have at systems level in terms of performance/cost trade-off will be illustrated by means of a preliminary innovative module architecture which foresees the elimination of more traditional T/R module components such as ferrite circulator and limiter for front-end signal routing and protection.