Details

Autor(en) / Beteiligte

• Uddin, N.
• Spang, M.
• Mager, T.
• Thiede, A.

Titel

Integrated active near-field sensor in GaAs technology

Ist Teil von

• 2009 European Microwave Integrated Circuits Conference (EuMIC), 2009, p.278-281

Ort / Verlag

IEEE

Erscheinungsjahr

2009

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• Integrated active sensors for near-field scanning of printed circuit boards (PCB) as well as large scale integrated (LSI) circuits have been designed in OMMIC ED02AH GaAs technology. Our frequency target ranges from 1 MHz to 3 GHz and is planned to extend up to 10 GHz. Electromagnetic (EM) field simulation results as well as on-wafer measurement results are presented for passive loop and dipole. A wideband amplifier with 22 dB gain and about 10 GHz bandwidth is designed and measurement results are presented. Finally qualitative on-wafer measurement results for the active sensors are presented.