Details

Autor(en) / Beteiligte

• He Bo
• Zhong Quan Ma
• Xu Jing
• Zhao Lei
• Li Feng
• Shen Cheng
• Zhang Nan Sheng
• Yu Zheng Shan
• Yin Yan Ting

Titel

Study of a Novel ITO/AZO/SiO2/p-Si SIS Heterojunction

Ist Teil von

• 2009 Symposium on Photonics and Optoelectronics, 2009, p.1-3

Ort / Verlag

IEEE eXpress Conference Publishing

Erscheinungsjahr

2009

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• ITO/AZO double films were deposited by RF sputtering on p-Si(lOO) substrate to fabricate ITO/AZO/SiCVp-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized by UV-VIS spectrophotometer, four point probe and Hall effect measurement, respectively. The results show that ITO/AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical good rectifying behavior and great photoelectric effect.