Details

Autor(en) / Beteiligte

• Jae Chul Kim
• Kyong Taek Lee
• Seung Hyun Song
• Min Sang Park
• Seung Ho Hong
• Gil Bok Choi
• Hyun Sik Choi
• Rock Hyun Baek
• Hyun Chul Sagong
• Yoon-Ha Jeong
• Sung Woo Jung
• Chang Young Kang

Titel

Reliability of HFO2/SIO2 dielectric with strain engineering using CESL stressor

Ist Teil von

• 2009 IEEE International Reliability Physics Symposium, 2009, p.917-920

Ort / Verlag

IEEE

Erscheinungsjahr

2009

Quelle

IEEE

Beschreibungen/Notizen

• We have investigated reliability characteristics for a high-k/metal gate MOSFET with strain engineering under constant voltage stress (CVS). Using contact edge stop layer (CESL), tensile and compressive strains are applied to the channel region. Since the compressive MOSFET has more hydrogen in the CESL, the MOSFET has lower reliability characteristics than others. Though the hydrogen can passivate dangling bonds in the high-k dielectric, the passivated bonds are easily broken by voltage stress, which cause degradation of high-k layer.