Details

Autor(en) / Beteiligte

• Kaushal, V.
• Guarino, G.
• Qiaoyan Yu
• Donaldson, W.R.
• Ampadu, P.
• Sobolewski, R.
• Margala, M.

Titel

A study of effects of deflector position variation on leakage currents in ballistic deflection transistors

Ist Teil von

• 2009 IEEE Nanotechnology Materials and Devices Conference, 2009, p.13-18

Ort / Verlag

IEEE

Erscheinungsjahr

2009

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• In this paper, leakage mechanisms in ballistic deflection transistors (BDT) are studied using Finite Element Analysis (FEA) based on a simple conductive media model, a BDT simulator based on the semi-classical billiard model, and experimental measurements. In BDT, by simply tailoring the architecture, the electron transport can be, to a large extent, modified and controlled to reduce leakage. Since the triangular deflector plays a significant role in the operation of BDT, the models take into account its position variation along the Y-axis. Experimental results also discuss leakages with the deflector position (DP) variation. Structural modifications in the BDT help in analysing the device functionality, and understanding the relationship between right drain output current (I RD ), left drain output current (I LD ) and top drain leakage currents (I TD ) with device geometry.